MMST4401_11 Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Small Signal Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
MMST4401
Features
• Power dissipation: 200mW (T_amb=25ć)
• Collector current: 0.6A
• Marking : K3X
• Operating and Storage junction temperature range
-55ć to + 150ć
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS ⁽²⁾
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
td
tr
ts
tf
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
Collector-Emitter Breakdown Voltage
(IE=100uAdc, IC=0)
Collector Cutoff Current
(VCB=35Vdc, IE=0Vdc)
Collector Cutoff Current
(VCE=35Vdc, IB=0Vdc)
Emitter Cutoff Current
(VEB=5Vdc, IC=0Vdc)
DC Current Gain
(IC=150mAdc, VCE=1.0Vdc)
(IC=500mAdc, VCE=2.0Vdc)
Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
Current Gain-Bandwidth Product
(VCE=10Vdc, IC=20mAdc, f=100MHz)
Output Capacitance
(VCB=10Vdc, f=1.0MHz, IE=0)
Delay Time
VCC=30V,IC=150uA,
Rise Time
VBE(off)=2V,IB1=15mA
Storage Time
Fall Time
VCC=30V, IC=150mA,
IB1=IB2=15mA
Min
40
60
6.0
---
---
---
Max
Units
---
Vdc
---
Vdc
---
Vdc
0.1
µAdc
0.1
µAdc
0.1
µAdc
100
40
---
---
250
---
---
---
---
---
300
---
---
---
0.4
Vdc
0.95 Vdc
---
MHz
6.5
pF
15
ns
20
ns
225
ns
30
ns
NPN Small Signal
Transistors
SOT-323
A
D
C
BC
F
E
B
E
G
H
J
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.071
.087
1.80
2.20
B
.045
.053
1.15
1.35
C
.079
.087
2.00
2.20
D
.026 Nominal
0.65Nominal
E
.047
.055
1.20
1.40
F
.012
.016
.30
.40
G
.000
.004
.000
.100
H
.035
.039
.90
1.00
J
.004
.010
.100
.250
K
.012
.016
.30
.40
Suggested Solder
Pad Layout
0.70
NOTE
0.90
1.90
mm
0.65
0.65
Revision: A
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2011/01/01