MMST2907A Datasheet, PDF (1/2 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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MMST2907A
Features
• Power dissipation: 200mW (T_amb=25ć)
• Collector current: -0.6A
• Marking Code: K3F
• Operating and Storage junction temperature range
-55ć to + 150ć
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS ⁽²⁾
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
td
tr
ts
tf
Collector-Emitter Breakdown Voltage
(IC=-10mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=-10uAdc, IE=0)
Collector-Emitter Breakdown Voltage
(IE=-10uAdc, IC=0)
Collector Cutoff Current
(VCB=-50Vdc, IE=0Vdc)
Collector Cutoff Current
(VCE=-35Vdc, IB=0Vdc)
Emitter Cutoff Current
(VEB=-3Vdc, IC=0Vdc)
DC Current Gain
(IC=-150mAdc, VCE=-10Vdc)
(IC=-1mAdc, VCE=-10Vdc)
Collector-Emitter Saturation Voltage
(IC=-500mAdc, IB=-50mAdc)
Base-Emitter Saturation Voltage
(IC=-500mAdc, IB=-50mAdc)
Current Gain-Bandwidth Product
(VCE=-20Vdc, IC=-50mAdc, f=100MHz)
Output Capacitance
(VCB=-10Vdc, f=1.0MHz, IE=0)
Delay Time
VCC=-30V,IC=-150mA,
Rise Time
VBE(off)=-0.5V,IB1=-15mA
Storage Time
Fall Time
VCC=-30V, IC=-150mA,
IB1=IB2=-15mA
-60
---
Vdc
-60
---
Vdc
-5.0
---
Vdc
---
-0.01
µAdc
---
-0.05
µAdc
---
-0.01
µAdc
100
100
---
---
200
---
---
---
---
---
300
---
---
---
-0.6
Vdc
-1.2
Vdc
---
MHz
8
pF
10
ns
25
ns
80
ns
30
ns
PNP Small Signal
Transistors
SOT-323
A
D
C
BC
F
E
B
E
G
H
J
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.071
.087
1.80
2.20
B
.045
.053
1.15
1.35
C
.079
.087
2.00
2.20
D
.026 Nominal
0.65Nominal
E
.047
.055
1.20
1.40
F
.012
.016
.30
.40
G
.000
.004
.000
.100
H
.035
.039
.90
1.00
J
.004
.010
.100
.250
K
.012
.016
.30
.40
Suggested Solder
Pad Layout
0.70
NOTE
0.90
1.90
0.65
0.65
Revision: 3
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2008/01/01