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MMSS8550-L_13 Datasheet, PDF (1/2 Pages) Micro Commercial Components – PNP Silicon Plastic-Encapsulate Transistor
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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MMSS8550-L
MMSS8550-H
Features
• Halogen free available upon request by adding suffix "-HF"
• Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
• Marking:Y2
• Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.
• Collector-current 1.5A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55OC to +150OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0)
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
Collector Cutoff Current
(VCB=40Vdc, IE=0)
Collector Cutoff Current
(VCE=20Vdc, IB=0)
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
ON CHARACTERISTICS
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VEB
DC Current Gain
(IC=100mAdc, VCE=1.0Vdc)
DC Current Gain
(IC=800mAdc, VCE=1.0Vdc)
Collector-Emitter Saturation Voltage
(IC=800mAdc, IB=80mAdc)
Base-Emitter Saturation Voltage
(IC=800mAdc, IB=80mAdc)
Base- Emitter Voltage
(IE=1.5Adc)
SMALL-SIGNAL CHARACTERISTICS
40
---
Vdc
25
---
Vdc
6.0
---
Vdc
---
0.1
uAdc
---
0.1
uAdc
---
0.1 uAdc
120
350
---
40
---
---
---
0.5
Vdc
---
1.2
Vdc
---
1.6
Vdc
PNP Silicon
Plastic-Encapsulate
Transistor
SOT-23
A
D
C
CB
F
E
B
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.104
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
NOTE
fT
Transistor Frequency
100
---
MHz
.031
(IC=50mAdc, VCE=10Vdc, f=30MHz)
.800
.035
.900
CLASSIFICATION OF HFE (1)
Rank
Range
L
120-200
H
200-350
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: B
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2013/01/01
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