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MMS9018-L Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Silicon Plastic-Encapsulate Transistor
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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Features
• SOT-23 Plastic-Encapsulate Transistors
• Capable of 0.2Watts(Tamb=25OC) of Power Dissipation.
• Collector-current 0.05A
• Collector-base Voltage 25V
• Operating and storage junction temperature range: -55OC to +150OC
• Marking : J8
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0)
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
Collector Cutoff Current
(VCB=20Vdc, IE=0)
Collector Cutoff Current
(VCE=15Vdc, IB=0)
Emitter Cutoff Current
(VEB=3.0Vdc, IC=0)
ON CHARACTERISTICS
hFE(1)
VCE(sat)
VBE(sat)
DC Current Gain
(IC=1.0mAdc, VCE=5.0Vdc)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
Base-Emitter Saturation Voltage
(IC=100mAdc, IB=1.0mAdc)
25
---
Vdc
18
---
Vdc
4.0
---
Vdc
---
0.1
uAdc
---
0.1
uAdc
---
0.1 uAdc
70
190
---
---
0.5
Vdc
---
1.4
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
600
---
MHz
(IC=5.0mAdc, VCE=5.0Vdc, f=400MHz)
CLASSIFICATION OF hFE
Rank
Range
L
70~105
H
105~190
MMS9018-L
MMS9018-H
NPN Silicon
Plastic-Encapsulate
Transistor
SOT-23
A
D
C
CB
F
E
B
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.098
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
MAX
2.80
3.04
2.10
2.64
1.20
1.40
.89
1.03
1.78
2.05
.45
.60
.013
.100
.89
1.12
.085
.180
.37
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
www.mccsemi.com
1 of 2
2011/01/01
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