MMS9015-L Datasheet, PDF (1/2 Pages) Micro Commercial Components – PNP Silicon Plastic-Encapsulate Transistor

MCC
TM
Micro Commercial Components

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20736 Marilla Street Chatsworth

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Features
• SOT-23 Plastic-Encapsulate Transistors
• Capable of 0.2Watts(Tamb=25^OC) of Power Dissipation.
• Collector-current 0.1A
• Collector-base Voltage 50V
• Operating and storage junction temperature range: -55^OC to +150^OC
• Marking : M6
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V_(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
V_(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
V_(BR)EBO
I_CBO
I_EBO
Emitter-Base Breakdown Voltage
(I_E=100uAdc, I_C=0)
Collector Cutoff Current
(V_CB=50Vdc, I_E=0)
Emitter Cutoff Current
(V_EB=5.0Vdc, I_C=0)
ON CHARACTERISTICS
50
---
Vdc
45
---
Vdc
5.0
---
Vdc
---
0.1
uAdc
---
0.1 uAdc
h_FE(1)
DC Current Gain
(IC=1.0mAdc, VCE=5.0Vdc)
V_CE(sat)
Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc)
V_BE(sat)
Base-Emitter Saturation Voltage
(I_C=100mAdc, I_B=10mAdc)
SMALL-SIGNAL CHARACTERISTICS
200 1000
---
---
0.3
Vdc
---
1.0
Vdc
f_T
Transistor Frequency
150
---
MHz
(I_C=10mAdc, V_CE=5.0Vdc, f=30MHz)
CLASSIFICATION OF hFE
Rank
Range
L
200~450
H
450~1000
MMS9015-L
MMS9015-H
PNP Silicon
Plastic-Encapsulate
Transistor
SOT-23
A
D
C
CB
F
E
B
E
G
H
J
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
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2011/01/01