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MMS8550-L Datasheet, PDF (1/2 Pages) Micro Commercial Components – PNP Silicon Plastic-Encapsulate Transistor
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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MMS8550-L
MMS8550-H
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Capable of 0.3Watts(Tamb=25OC) of Power Dissipation.
• Collector-current 0.5A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55OC to +150OC
• Marking : 2TY
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
ICBO
Collector Cutoff Current
(VCB=40Vdc, IE=0)
ICEO
Collector Cutoff Current
(VCE=20Vdc, IB=0)
IEBO
Emitter Cutoff Current
(VEB=3.0Vdc, IC=0)
ON CHARACTERISTICS
40
---
Vdc
25
---
Vdc
5.0
---
Vdc
---
0.1
uAdc
---
0.1
uAdc
---
0.1 uAdc
hFE(1)
DC Current Gain
(IC=50mAdc, VCE=1.0Vdc)
hFE(2)
DCCurrent Gain
(IC=500mAdc, VCE=1.0Vdc)
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
VBE(sat)
Base-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
VEB
Base- Emitter Voltage
(IE=100mAdc)
SMALL-SIGNAL CHARACTERISTICS
120
350
---
50
---
---
---
0.6
Vdc
---
1.2
Vdc
---
1.4
Vdc
fT
Transistor Frequency
150
---
MHz
(IC=20mAdc, VCE=6.0Vdc, f=30MHz)
PNP Silicon
Plastic-Encapsulate
Transistor
SOT-23
A
D
C
CB
F
E
B
E
G
H
J
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.098
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
MAX
2.80
3.04
2.10
2.64
1.20
1.40
.89
1.03
1.78
2.05
.45
.60
.013
.100
.89
1.12
.085
.180
.37
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
CLASSIFICATION OF HFE (1)
Rank
Range
L
120-200
H
200-350
.037
.950
.037
.950
Revision: B
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2011/01/30