MMDT3904V Datasheet, PDF (1/5 Pages) Diodes Incorporated – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
MMDT3904V
Features
• Epitaxial Die Construction
• Ideal for Low Power Amplification and Switching
• Ultra-small Surface Mount Package
• Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
x Marking:KAP
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VCEO
VCBO
VEBO
IC
PC
R©JA
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Dissipation
Thermal Resistance Junction to Ambient
Operating Junction Temperature
Storage Temperature
Rating
40
60
6
0.2
0.2
625
-55 to +150
-55 to +150
Unit
V
V
V
A
W
к/W
к
к
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
IBL
hFE
VCE(sat)
VBE(sat)
Parameter
Collector-Emitter Breakdown Voltage
(IC=1mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=10uAdc, IE=0)
Collector-Emitter Breakdown Voltage
(IE=10uAdc, IC=0)
Collector Cutoff Current
(VCE=60Vdc,VEB(OFF)=3Vdc)
Base Cutoff Current
(VCE=60Vdc,VEB(OFF)=3Vdc)
DC Current Gain
(IC=0.1mAdc, VCE=1Vdc)
(IC=1mAdc, VCE=1Vdc)
(IC=10mAdc, VCE=1Vdc)
(IC=50mAdc, VCE=1Vdc)
(IC=100mAdc, VCE=1Vdc)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1mAdc)
(IC=50mAdc, IB=5mAdc)
Base-Emitter Saturation Voltage
(IC=10mAdc, IB=1mAdc)
(IC=50mAdc, IB=5mAdc)
Min Typ Max Units
40
---
--- Vdc
60
---
--- Vdc
5
---
--- Vdc
---
---
50 nAdc
---
---
50 nAdc
40
---
---
70
---
---
100
60
---
---
300
---
---
30
---
---
---
--- 0.2 Vdc
---
--- 0.3
0.65 --- 0.85 Vdc
---
--- 0.95
NPN
Plastic-Encapsulate
Transistors
SOT-563
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.006
.011
0.15
0.30
B
.043
.049
1.10
1.25
C
.061
.067
1.55
1.70
D
.020
0.50
G
.035
.043
0.90
1.10
H
.059
.067
1.50
1.70
K
.022
.023
0.56
0.60
L
.004
.011
0.10
0.30
M
.004
.007
0.10
0.18
Revision: 3
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2008/01/01