MMBTA94 Datasheet, PDF (1/3 Pages) Avic Technology – SOT-23-3L Plastic-Encapsulate Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
Features
• Surface Mount SOT-23 Package
• Capable of 350mWatts of Power Dissipation
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Marking: 4D
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IC
Collector-Emitter Breakdown Voltage*
(IC=-1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=-100µAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=-100µAdc, IC=0)
Collector Current-Continuous
-400
-400
-5
-100
Vdc
Vdc
Vdc
mAdc
ICBO
IEBO
Collector Cutoff Current
(VCB=-400Vdc, IE=0)
Emitter Cutoff Current
(VEB=-4Vdc, IC=0)
TJ
Junction Temperature
-100
-100
150
nAdc
nAdc
°C
Tstg
Storage Temperature
–55 to +150
°C
ON CHARACTERISTICS
hFE
VCE(sat)
DC Current Gain*
(IC=-1.0mAdc, VCE=-10Vdc)
(IC=-10mAdc, VCE=-10Vdc)
(IC=-50mAdc, VCE=-10Vdc)
(IC=-100mAdc,VCE=-10Vdc)
Collector-Emitter Saturation Voltage
(IC=-10mAdc, IB=-1.0mAdc)
(IC=-50mAdc, IB=-5mAdc)
VBE(sat)
Base-Emitter Saturation Voltage
(IC=-50mAdc,IB=-1.0mAdc)
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=-10mAdc, VCE=-20Vdc, )
70
80
300
40
40
-0.2
Vdc
-0.3
-0.75
Vdc
50
MHz
MMBTA94
PNP Silicon High
Voltage Transistor
SOT-23
A
D
C
CB
F
E
B
E
G
H
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
www.mccsemi.com
3 of 3
2011/01/01