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MMBTA93 Datasheet, PDF (1/3 Pages) Zowie Technology Corporation – HIGH VOLTAGE TRANSISTOR PNP SILICON
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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MMBTA93
Features
• Surface Mount SOT-23 Package
• Capable of 300mWatts of Power Dissipation
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Marking: YW
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IC
Collector-Emitter Breakdown Voltage
(IC=-1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=-100µAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=-100µAdc, IC=0)
Collector Current-Continuous
Min
-200
-200
-5
-500
Max Units
Vdc
Vdc
Vdc
mAdc
ICBO
IEBO
Collector Cutoff Current
(VCB=-200Vdc, IE=0)
Emitter Cutoff Current
(VEB=-5Vdc, IC=0)
ON CHARACTERISTICS
hFE
VCE(sat)
DC Current Gain
(IC=-1.0mAdc, VCE=-10Vdc)
(IC=-10mAdc, VCE=-10Vdc)
(IC=-30mAdc, VCE=-10Vdc)
Collector-Emitter Saturation Voltage
(IC=-20mAdc, IB=-2.0mAdc)
-250
-100
nAdc
nAdc
25
40
25
-0.5
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=-20mAdc,IB=-2.0mAdc)
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=-10mAdc, VCE=-20Vdc, f=100MHz)
50
Ccb
Collector-Base Capacitance
(VCB=-20Vdc, IE=0, f=1.0MHz)
-0.9
Vdc
MHz
8.0
pF
THERMAL CHARACTERISTICS
Characteristic
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Pc
RqJA
TJ, Tstg
Max
300
417
–55 to +150
Unit
mW
°C/mW
°C
PNP Silicon High
Voltage Transistor
SOT-23
A
D
C
CB
F
E
B
E
G
H
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
www.mccsemi.com
1 of 3
2011/01/01