MMBTA42 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN high-voltage transistor

MCC

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21201 Itasca Street Chatsworth

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MMBTA42
Features
• Surface Mount SOT-23 Package
• Capable of 300mWatts of Power Dissipation
C
Pin Configuration
Top View
1D
NPN Silicon High
Voltage Transistor
B
E
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Collector-Emitter Breakdown Voltage*
(IC=1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=100µAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=100µAdc, IC=0)
Collector Cutoff Current
(VCB=200Vdc, IE=0)
Emitter Cutoff Current
(VEB=6.0Vdc, IC=0)
300
Vdc
300
Vdc
6.0
Vdc
0.1
uAdc
0.1
uAdc
ON CHARACTERISTICS
hFE
DC Current Gain*
(IC=1.0mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=30mAdc, VCE=10Vdc)
25
40
----
40
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=20mAdc, IB=2.0mAdc)
0.5
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=20mAdc, IB=2.0mAdc)
0.9
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=10mAdc, VCE=20Vdc, f=100MHz)
Ccb
Collector-Emitter Capacitance
(VCB=20Vdec, IE=0, f=1.0MHz)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation FR–5 Board,⁽¹⁾
P_D
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,⁽²⁾ T_A = 25°C
Derate above 25°C
R_qJA
P_D
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R_qJA
T_J, T_stg
50
3.0
Max
225
1.8
556
300
2.4
417
–55 to +150
MHz
pF
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
SOT-23
A
D
CB
F
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.098
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
*Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
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