MMBTA28 Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN SURFACE MOUNT DARLINGTON TRANSISTOR

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• High Current Gain
• Ideal for Medium Power Amplification and Switching
• Epitaxial Planar Die Construction
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Marking: 3SS
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Collector-Emitter Breakdown Voltage*
(IC=1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=100µAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=100µAdc, IC=0)
Collector Cutoff Current
(VCB=60Vdc, IE=0)
Emitter Cutoff Current
(VEB=10Vdc, IC=0)
80.0
80.0
12.0
100
100
Vdc
Vdc
Vdc
nA
nA
ON CHARACTERISTICS
hFE
DC Current Gain*
(IC=10mAdc, VCE=5Vdc)
(IC=100mAdc, VCE=5Vdc)
10,000
10,000
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=100uAdc)
Base-Emitter Saturation Voltage
(IC=100mAdc,VCE=5.0v)
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=10mAdc, VCE=5.0Vdc, f=100MHz)
Ccb
Collector-Emitter Capacitance
(VCB=10Vdec, IE=0, f=1.0MHz)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation FR–5 Board,
P_D
T_A = 25°C
Thermal Resistance, Junction to Ambient R_qJA
Junction and Storage Temperature
T_J, T_stg
1.5
2.0
125
8.0
Max
300
417
–55 to +150
Vdc
Vdc
MHz
pF
Unit
mW
°C/W
°C
MMBTA28
NPN Surface Mount
Darlington Transistor
SOT-23
A
D
C
CB
F
E
B
E
G
H
J
k
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.110
.118
2.80
3.00
B
.090
.098
2.30
2.50
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.043
.90
1.10
J
.003
.007
.085
.180
K
.015
.020
.37
.51
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
NOTE
.037
.950
.037
.950
inches
mm
Revision: A
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1 of 4
2011/01/01