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MMBT945-L Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Silicon Plastic-Encapsulate Transistor
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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MMBT945-L
MMBT945-H
Features
• Capable of 0.2Watts of Power Dissipation.
• Collector-current 0.15A
• Collector-base Voltage 60V
• Operating and storage junction temperature range: -55OC to +150OC
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Marking: CR •
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CBO
ICER
IEBO
Collector-Emitter Breakdown Voltage
(I C=1mAdc, IB=0)
Collector-Base Breakdown Voltage
(I C=100uAdc, IE=0)
Emitter-Base Breakdown Voltage
(I E=100uAdc, IC=0)
Collector Cutoff Current
(V CB=60Vdc, IE=0Adc)
Collector Cutoff Current
(V CE=55Vdc,R=10M OHM)
Emitter Cutoff Current
(V EB=5.0Vdc, IC=0Adc)
ON CHARACTERISTICS
50
Vdc
60
Vdc
5.0
Vdc
0.1
uAdc
0.1
uAdc
0.1 uAdc
h FE(1)
h FE(2)
V CE(sat)
V BE(sat)
Cob
DC Current Gain
(IC=1.0mAdc, VCE=6.0Vdc)
DC Current Gain
(I C=0.1mAdc, VCE=6.0Vdc)
Collector-Emitter Saturation Voltage
(I C=100mAdc, IB=10mAdc)
Base-Emitter Saturation Voltage
(I C=100mAdc, IB=10mAdc)
Collector output capacitance
( VCB =10V, I E=0 ,f=1MHz )
130
400
40
0.3
Vdc
1.0
Vdc
3.0
pF
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(IC=10mAdc, VCE=6.0Vdc, f=30MHz)
150
MHz
CLASSIFICATION OF HFE (1)
Rank
L
Range
130-200
H
200-400
NPN Silicon
Plastic-Encapsulate
Transistor
SOT-23
A
D
C
CB
F
E
B
E
G
H
J
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
www.mccsemi.com
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2011/01/01