MMBT5551 Datasheet, PDF (1/2 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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MMBT5551
Features
• Collector Current: I_CM=0.6A
• Collector-Base Voltage: V_(BR)CBO=180V
• Operating And Storage Temperatures –55^OC to 150^OC
• Capable of 0.3Watts of Power Dissipation
• Marking: G1
• Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V _(BR)CEO
V _(BR)CBO
V _(BR)EBO
I_CBO
IEBO
Collector -Emitter Breakdown Voltage
(I_C=1.0mAdc, I_B=0)
Collector-Base Breakdown Voltage
(I_C=100uAdc, I_E=0)
Emitter-Base Breakdown Voltage
(I_E=10uAdc, I_C=0)
Collector Cutoff Current
(V_CB=120Vdc, I_E=0)
Emitter Cutoff Current
(V_EB=4.0Vdc, I_C=0)
ON CHARACTERISTICS
160
---
Vdc
180
---
Vdc
6.0
---
Vdc
---
0.1 uAdc
---
0.1 uAdc
h_FE-1
DC Current Gain
(VCE=5.0Vdc, IC=1.0mAdc)
h_FE-2
DC Current Gain
(VCE=5.0Vdc, IC=10mAdc)
h_FE-3
V _CE(sat)
DC Current Gain
(V_CE=5.0Vdc, I_C=50mAdc)
Collector-Emitter Saturation Voltage
(I_C=50mAdc, I_B=5.0mAdc)
V _BE(sat)
Base-Emitter Saturation Voltage
(I_C=50mAdc,I_B=5.0mAdc)
SMALL-SIGNAL CHARACTERISTICS
80
---
---
100
200
---
50
---
---
---
0.5
Vdc
---
1.0
Vdc
f_T
Current Gain-Bandwidth Product
(I_C=10mAdc, V_CE=5.0Vdc, f=30MHz)
100
---
MHz
NPN Plastic
Encapsulate
Transistor
SOT-23
A
D
C
CB
F
E
B
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.098
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
NOTE
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: 4
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2008/01/01