MMBT5401_11 Datasheet, PDF (1/2 Pages) Micro Commercial Components – PNP Plastic Encapsulate Transistor

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
MMBT5401
Features
• Collector Current: I_CM=0.6A
• Collector-Base Voltage: V_(BR)CBO=160V
• Operating And Storage Temperatures –55^OC to 150^OC
• Capable of 0.3Watts of Power Dissipation
• Marking: 2L
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V _(BR)CEO
V _(BR)CBO
V _(BR)EBO
I_CBO
IEBO
Collector -Emitter Breakdown Voltage
(I_C=1.0mAdc, I_B=0)
Collector-Base Breakdown Voltage
(I_C=100uAdc, I_E=0)
Emitter-Base Breakdown Voltage
(I_E=10uAdc, I_C=0)
Collector Cutoff Current
(V_CB=120Vdc, I_E=0)
Emitter Cutoff Current
(V_EB=4.0Vdc, I_C=0)
ON CHARACTERISTICS
h_FE-1
h_FE-2
h_FE-3
V _CE(sat)
V _BE(sat)
DC Current Gain
(VCE=5.0Vdc, IC=1.0mAdc)
DC Current Gain
(VCE=5.0Vdc, IC=10mAdc)
DC Current Gain
(V_CE=5.0Vdc, I_C=50mAdc)
Collector-Emitter Saturation Voltage
(I_C=50mAdc, I_B=5.0mAdc)
Base-Emitter Saturation Voltage
(I_C=50mAdc,I_B=5.0mAdc)
SMALL-SIGNAL CHARACTERISTICS
150
---
Vdc
160
---
Vdc
5.0
---
Vdc
---
0.1 uAdc
---
0.1 uAdc
80
---
---
100
200
---
50
---
---
---
0.5
Vdc
---
1.0
Vdc
f_T
Current Gain-Bandwidth Product
(I_C=10mAdc, V_CE=5.0Vdc, f=30MHz)
100
---
MHz
PNP Plastic
Encapsulate
Transistor
SOT-23
A
D
C
CB
F
E
B
E
G
H
J
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
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2011/01/01