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MMBT3906T_11 Datasheet, PDF (1/4 Pages) Micro Commercial Components – PNP General Purpose Transistor
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
x Surface Mount SOT-523 Package
x Epitaxial Planar Die Construction
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Marking:3N
MMBT3906T
PNP General
Purpose Transistor
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
RșJA
PD
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Typical Thermal Resistance Junction
to Ambient
Power Dissipation
Junction Temperature
Storage Temperature
Rating
-40
-40
-5.0
-200
833
150
-55 to +150
-55 to +150
Unit
V
V
V
mA
ć/W
mW
ć
ć
Electrical Characteristics @ 25qC Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Collector-Emitter Breakdown Voltage
(IC=-1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=-10PAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=-10PAdc, IC=0)
Collector Cut-off Current
(VCB=-30Vdc, IE=0)
Emitter Cut-off Current
(VEB=-5Vdc, IC=0)
-40
Vdc
-40
Vdc
-5.0
Vdc
-50
nAdc
-50
nAdc
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
DC Current Gain*
(IC=-0.1mAdc, VCE=-1.0Vdc)
(IC=-1.0mAdc, VCE=-1.0Vdc)
(IC=-10mAdc, VCE=-1.0Vdc)
(IC=-50mAdc, VCE=-1.0Vdc)
(IC=-100mAdc, VCE=-1.0Vdc)
Collector-Emitter Saturation Voltage
(IC=-10mAdc, IB=-1.0mAdc)
(IC=-50mAdc, IB=-5.0mAdc)
Base-Emitter Saturation Voltage
(IC=-10mAdc, IB=-1.0mAdc)
(IC=-50mAdc, IB=-5.0mAdc)
60
80
100
300
60
30
-0.25 Vdc
-0.4
-0.65 -0.85 Vdc
-0.95
SOT-523
A
D
C
BC
B
E
E
G
H
J
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.059
.067
1.50
1.70
B
.030
.033
0.75
0.85
C
.057
.069
1.45
1.75
D
.020 Nominal
0.50Nominal
E
.035
.043
0.90
1.10
G
.000
.004
.000
.100
H
.028
.031
.70
0.80
J
.004
.008
.100
.200
K
.010
.014
.25
.35
NOTE
Revision: A
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2011/01/01