MMBT3906 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP switching transistor

MCC

  omponents
21201 Itasca Street Chatsworth

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MMBT3906
Features
• Surface Mount SOT-23 Package
• Capable of 350mWatts of Power Dissipation
C
Pin Configuration
Top View
2A
B
E
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
40
Vdc
(IC=1.0mAdc, IB=0)
V(BR)CBO
Collector-Base Breakdown Voltage
40
Vdc
(IC=10µAdc, IE=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
5.0
Vdc
(IE=10µAdc, IC=0)
IBL
Base Cutoff Current
50
nAdc
(VCE=30Vdc, VBE=3.0Vdc)
ICEX
Collector Cutoff Current
50
nAdc
(VCE=30Vdc, VBE=3.0Vdc)
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
DC Current Gain*
(IC=0.1mAdc, VCE=1.0Vdc)
(IC=1.0mAdc, VCE=1.0Vdc)
(IC=10mAdc, VCE=1.0Vdc)
(IC=50mAdc, VCE=1.0Vdc)
(IC=100mAdc, VCE=1.0Vdc)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
(IC=50mAdc, IB=5.0mAdc)
Base-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
(IC=50mAdc, IB=5.0mAdc)
60
80
100
300
60
30
0.25
Vdc
0.4
0.65
0.85
Vdc
0.95
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=10mAdc, VCE=20Vdc, f=100MHz)
250
MHz
Cobo
Output Capacitance
(VCB=5.0Vdec, IE=0, f=1.0MHz)
4.5
pF
Cibo
Input Capacitance
(VBE=0.5Vdc, IC=0, f=1.0MHz)
10.0
pF
NF
Noise Figure
(IC=100µAdc, VCE=5.0Vdc, RS=1.0kΩ
4.0
dB
f=10Hz to 15.7kHz)
SWITCHING CHARACTERISTICS
td
Delay Time
(VCC=3.0Vdc, VBE=0.5Vdc
tr
Rise Time
IC=10mAdc, IB1=1.0mAdc)
ts
Storage Time (VCC=3.0Vdc, IC=10mAdc
tf
Fall Time
IB1=IB2=1.0mAdc)
*Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
35
ns
35
ns
225
ns
75
ns
PNP General
Purpose Amplifier
SOT-23
A
D
CB
F
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.098
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
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