MJE13005 Datasheet, PDF (1/3 Pages) Motorola, Inc – 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS

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MJE13005
Features
• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
• Capable of 1.5Watts of Power Dissipation.
• Collector-current 4.0A
• Collector-base Voltage 700V
• Operating and storage junction temperature range: -55^OC to +150^OC
x Marking: 3DD13005
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
NPN Silicon
Plastic-Encapsulate
Transistor
TO-220
B
F
C
S
OFF CHARACTERISTICS
V_(BR)CEO
Collector-Emitter Breakdown Voltage
400
(I_C=10mAdc, I_B=0)
V_(BR)CBO
Collector-Base Breakdown Voltage
700
(I_C=1000uAdc, I_E=0)
V_(BR)EBO
Emitter-Base Breakdown Voltage
9.0
(I_E=1000uAdc, I_C=0)
I_CBO
Collector Cutoff Current
(V_CB=700Vdc, I_E=0)
ICEO
Collector Cutoff Current
(V_CE=400Vdc,I_B=0)
IEBO
Emitter Cutoff Current
(V_EB=9.0Vdc, I_C=0)
ON CHARACTERISTICS
h_FE
DC Current Gain
(IC=1000mAdc, VCE=5.0Vdc
10
V_CE(sat)
V_BE(sat)
Collector-Emitter Saturation Voltage
(I_C=2000mAdc, I_B=500mAdc)
Base-Emitter Saturation Voltage
(I_C=2000mAdc, I_B=500mAdc)
SMALL-SIGNAL CHARACTERISTICS
f_T
Trans istor Frequency
(IC=500mAdc, VCE=10Vdc, f=1.0MHz) 5.0
t_F
Fall Time
V_CC=120V,I_C=2.0A
tS
Storage Time
IB1=IB2=0.4A
1000
100
1000
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
40
0.6
Vdc
1.6
Vdc
MHz
0.9
uS
4.0
uS
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
Q
A
12 3
H
K
T
U
V
L
J
D
G
R
PIN 1.
BASE
PIN 2.
COLLECTOR
PIN 3.
EMITTER
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX NOTE
A
.560
.625
14.22
15.88
B
.380
.420
9.65
10.67
C
.140
.190
3.56
4.82
D
.020
.045
0.51
1.14
F
.139
.161
3.53
4.09
∅
G
.190
.110
2.29
2.79
H
---
.250
---
6.35
J
.012
.025
0.30
0.64
K
.500
.580
12.70
14.73
L
.045
.060
1.14
1.52
N
.190
.210
4.83
5.33
Q
.100
.135
2.54
3.43
R
.080
.115
2.04
S
.045
.055
1.14
2.92
1.39
T
.230
.270
5.84
6.86
U
-----
.050
-----
1.27
V
.045
-----
1.15
-----
Revision: A
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2011/01/01