MJE13003B Datasheet, PDF (1/2 Pages) Weitron Technology – High Voltage Fast-switching NPN Power Transistor

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Capable of 1.0Watts of Power Dissipation.
• Collector-current 1.5A
• Collector-base Voltage 700V
• Operating and storage junction temperature range: -55^OC to +150^OC
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
x Marking:3DD13003
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
ICEO
IEBO
Collector-Emitter Breakdown Voltage
(I_C=10mAdc, I_B=0)
Collector-Base Breakdown Voltage
(I_C=1000uAdc, I_E=0)
Emitter-Base Breakdown Voltage
(I_E=1000uAdc, I_C=0)
Collector Cutoff Current
(V_CB=700Vdc, I_E=0)
Collector Cutoff Current
(V_CE=400Vdc,I_B=0)
Emitter Cutoff Current
(V_EB=7.0Vdc, I_C=0)
400
Vdc
700
Vdc
9.0
Vdc
1000 uAdc
500 uAdc
100 uAdc
ON CHARACTERISTICS
h_FE
V_CE(sat)
V_CE(sat)
V_BE(sat)
DC Current Gain
(IC=0.4Adc, VCE=10Vdc)
Collector-Emitter Saturation Voltage
(I_C=500mAdc, I_B=100mAdc)
Collector-Emitter Saturation Voltage
(I_C=1500mAdc, I_B=500mAdc)
Base-Emitter Saturation Voltage
(I_C=500mAdc, I_B=100mAdc)
20
40
0.8
Vdc
3.0
Vdc
1.0
Vdc
MJE13003B
NPN Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
B
C
D
G
EC
B
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97 14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.096
.104
2.44
2.64
Revision: A
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2011/01/01