MJE13002B Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Silicon Plastic-Encapsulate Transistor

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
MJE13002B
Features
• Capable of 900mWatts of Power Dissipation.
• Collector-current 0.8A
• Collector-base Voltage 600V
• Operating and storage junction temperature range: -55^OC to +150^OC
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
I_EBO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(I_C=100uAdc, I_E=0)
Emitter-Base Breakdown Voltage
(I_E=100uAdc, I_C=0)
Collector Cutoff Current
(V_CB=600Vdc, I_E=0)
Emitter Cutoff Current
(V_EB=6.0Vdc, I_C=0)
400
Vdc
600
Vdc
6.0
Vdc
100 uAdc
100 uAdc
ON CHARACTERISTICS
h_FE(1)
DC Current Gain
(IC=10mAdc, VCE=10Vdc)
h_FE(2)
DC Current Gain
(IC=200mAdc, VCE=10Vdc)
V_CE(sat)
V_BE(sat)
Collector-Emitter Saturation Voltage
(I_C=200mAdc, I_B=40mAdc)
Base-Emitter Saturation Voltage
(I_C=200mAdc, I_B=40mAdc)
SMALL-SIGNAL CHARACTERISTICS
6
9.0
40
0.5
Vdc
1.1
Vdc
f_T
Transistor Frequency
(I_C=100mAdc, V_CE=10Vdc, f=1.0MHz)
5.0
MHz
t_F
Fall Time
V _CC=100V,I_C=1.0A ,
0.5
uS
t_S
Storage Time
I_B1=I_B2=0.2A
2.5
uS
NPN Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
B
C
D
EC
G
B
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.175
.185
B
.175
.185
C
.500
---
D
.016
.020
E
.135
.145
G
.095
.105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
Revision: A
www.mccsemi.com
1 of 2
2011/01/01