MJE13002 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.5A,300-400V,40W)

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MJE13002
Features
• Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Capable of 1.25Watts of Power Dissipation.
• Collector-current 1.0A
• Collector-base Voltage 600V
• Operating and storage junction temperature range: -55^OC to +150^OC
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
I_EBO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(I_C=100uAdc, I_E=0)
Emitter-Base Breakdown Voltage
(I_E=100uAdc, I_C=0)
Collector Cutoff Current
(V_CB=600Vdc, I_E=0)
Emitter Cutoff Current
(V_EB=6.0Vdc, I_C=0)
400
Vdc
600
Vdc
6.0
Vdc
100 uAdc
100 uAdc
ON CHARACTERISTICS
h_FE(1)
DC Current Gain
(IC=100mAdc, VCE=10Vdc)
h_FE(2)
DC Current Gain
(IC=200mAdc, VCE=10Vdc)
h_FE(3)
DC Current Gain
(IC=10mAdc, VCE=10Vdc)
V_CE(sat)
V_BE(sat)
Collector-Emitter Saturation Voltage
(I_C=200mAdc, I_B=40mAdc)
Base-Emitter Saturation Voltage
(I_C=200mAdc, I_B=40mAdc)
SMALL-SIGNAL CHARACTERISTICS
8.0
60
9.0
40
6.0
0.8
Vdc
1.1
Vdc
f_T
Transistor Frequency
(I_C=100mAdc, V_CE=10Vdc, f=1.0MHz)
5.0
MHz
t_F
Fall Time
V _CC=100V,I_C=1.0A ,
0.5
uS
t_S
Storage Time
I_B1=I_B2=0.2A
2.5
uS
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.
NPN Silicon
Plastic-Encapsulate
Transistor


A
K
N
D
E


M
B


3 21




L
G


C
F
Q












L
M
N
Q
J
PIN 1.
EMITTER
PIN 2.
COLLECTOR
PIN 3.
BASE
DIMENSIONS
 


0.291
0.307
0.417
0.433
0.602
0.618
4
1
0.118
0.126
0.026
0.034
0.046
0.054
0.090TYP
0.098
0.114
0.083
0.091
0.000
0.012
0.043
0.059
0.018
0.024



7.40
7.80
10.60
11.00
15.30
15.70
3.90
4.10
3.00
3.20
0.66
0.86
1.17
1.37
2.290TYP
2.50
2.90
2.10
2.30
0.00
0.30
1.10
1.50
0.45
0.60
 
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2011/01/01