MJE13001 Datasheet, PDF (1/3 Pages) Unisonic Technologies – NPN EPITAXIAL SILICON TRANSISTOR

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Capable of 1.0Watts of Power Dissipation.
• Collector-current 0.2A
• Collector-base Voltage 600V
• Operating and storage junction temperature range: -55^OC to +150^OC
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
x Marking: 13001
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
ICEO
IEBO
Collector-Emitter Breakdown Voltage
(I_C=1.0mAdc, I_B=0)
Collector-Base Breakdown Voltage
(I_C=100uAdc, I_E=0)
Emitter-Base Breakdown Voltage
(I_E=100uAdc, I_C=0)
Collector Cutoff Current
(V_CB=600Vdc, I_E=0)
Collector Cutoff Current
(V_CE=400Vdc,I_B=0)
Emitter Cutoff Current
(V_EB=7.0Vdc, I_C=0)
400
Vdc
600
Vdc
7.0
Vdc
100 uAdc
200 uAdc
100 uAdc
ON CHARACTERISTICS
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
VBE
DC Current Gain
(IC=20mAdc, VCE=20Vdc)
DC Current Gain
(I_C=0.25mAdc, V_CE=10Vdc)
Collector-Emitter Saturation Voltage
(I_C=50mAdc, I_B=10mAdc)
Base-Emitter Saturation Voltage
(I_C=50mAdc, I_B=10mAdc)
Base-Emitter Voltage
(I_E=100mAdc)
10
40
5.0
0.5
Vdc
1.2
Vdc
1.1
Vdc
SMALL-SIGNAL CHARACTERISTICS
f_T
Trans istor Frequency
(IC=20mAdc, VCE=20Vdc, f=1.0MHz)
8.0
MHz
t_F
Fall Time
V_CC=45V,I_C=50mA
0.3
uS
tS
Storage Time
IB1=IB2=5.0mA
1.5
uS
MJE13001
NPN Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
B
C
D
BC
G
E
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.175
.185
B
.175
.185
C
.500
---
D
.016
.020
E
.135
.145
G
.095
.105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
Revision: A
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2011/01/01