MJ413 Datasheet, PDF (1/2 Pages) Motorola, Inc – 10 AMPERE POWER TRANSISTORS NPN SILICON

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MJ413
 ^MJ423
MJ431
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• High Collector-Emitter Voltage V_CES=400V
• DC Current Gain Specified 3.5A
• High Frequency Response to 2.5 MHz
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• Operating Temperature: -55°C to +150°C
: ^{• Storage Temperature: -55°C to +150°C}
• Maximum Thermal Resistance: 1.0 /W junction to case
Characteristic
Symbol
Collector-Emitter Voltage
V_CEX
Collector-Base Voltage
V_CB
Emitter-Base Voltage
V_EB
Collector Current-Continuous
I_C
Base Current
I_B
: Total Device Dissipation @T_C=25
: Derate above 25
P_D
Max
400
400
5.0
10
2.0
125
1.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
: ^Watts
W/
Figure 1 - Power Derating Curve
0
50
100
150
Temperature °C
Power Dissipation (W) - Versus - Temperature °C
10 Amp
NPN Silicon
Power Transistors
125W
TO-3
A
N
E
C
K
D
V
H
U
L
2
1
GB
Q
PIN 1.
PIN 2.
CASE.
BASE
EMITTER
COLLECTOR
DIMENSIONS
INCHES
DIM
MIN
MAX
A
1.550 REF
B
-----
1.050
C
.250
.335
D
.038
.043
E
0.55
0.70
G
.430 BSC
H
.215 BSC
K
.440
.480
L
.665 BSC
N
-----
.830
Q
.151
.165
U
1.187 BSC
V
.131
.188
MM
MIN
MAX
39.37 REF
-----
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
-----
21.08
3.84
4.19
30.15 BSC
3.33
4.77
NOTE
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