MCL4448 Datasheet, PDF (1/4 Pages) Formosa MS – Switching Diode - Silicon epitaxial planar type

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TM
Micro Commercial Components

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20736 Marilla Street Chatsworth

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MCL4448
Features
• Silicon epitaxial planar diode
• Fast Switching diodes
• 500mW power dissipation
• This diode is also available in the DO-35 case with the type
500mW 100 Volt
designation 1N4448, in the Minimelf case with the type designation _{Silicon Epitaxial Diode}
DL4448
• Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
Maximum Ratings
• Operating Temperature: -55^OC to +150 ^OC
• Storage Temperature: -55^OC to +150^OC
• Maximum Thermal Resistance; 350K/W Junction To Ambient
• Epoxy meets UL 94 V-0 flammability rating
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1
25^OC
Unless
Otherwise
Specified
Reverse Voltage
Peak Reverse
Voltage
V_R
75V
VRM
100V
Average Rectified
Current
IAV
Power Dissipation
P_TOT
Junction Temperature
T_J
Surge Forward
Current
I_FSM
Instantaneous
V_F
Forward Voltage
Maximum DC
Reverse Current At
I_R
Rated DC Blocking
Voltage
150mA
500mW¹⁾
150^OC
Resistive Load
f > 50Hz
T_A=25^OC
500mA t<1S, T_J=25^OC
1.0V(MAX)
0.62-0.72V
25nA
5.0uA
50uA
I_FM = 100mA;
I_FM = 5.0mA
TJ=25^OC, VR=20V
V_R=75V,
VR=20V TJ=150^OC
Minimum Reverse
Breakdown Voltage
V_(BR)R
100V
Tested with
100uA puse
Typical Junction
Capacitance
C_J
4.0pF
Measured at
V_R=V_F=0V
Reverse Recovery
Time
IF=10mA,
T_rr
4.0nS V_R = 6.0V
RL=100OHMS
1) Valid provided that leads at a distance of 8mm from case are kept
at ambient temperature(DO-35)
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 5.
MICROMELF
Cathode Mark
C
B
A
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.071
.079
B
.004
.008
C
.047
.051
MM
MIN
1.8
.10
1.20
MAX
2.0
.20
1.30
NOTE
∅
SUGGESTED SOLDER
PAD LAYOUT
0.039
0.055”
0.030”
Revision: A
www.mccsemi.com
2011/01/01