M28S-B Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Silicon Plastic-Encapsulate Transistor

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
Features
• Capable of 0.625Watts of Power Dissipation.
• Collector-current 1.0A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55^OC to +150^OC
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Marking: M28S X
M28S-B
M28S-C
M28S-D
NPN Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V_(BR)EBO
I _CBO
I_CEO
I_EBO
Collector-Emitter Breakdown Voltage
(I _C=1.0mAdc, I_B=0)
Collector-Base Breakdown Voltage
(I _C=0.1mAdc, I_E=0)
Emitter-Base Breakdown Voltage
(I _E=0.1mAdc, I_C=0)
Collector Cutoff Current
(V _CB=40Vdc, I_E=0)
Collector Cutoff Current
(VCE=20Vdc, IE=0)
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
ON CHARACTERISTICS
20
---
Vdc
40
---
Vdc
6.0
---
Adc
---
1.0
uAdc
----
5.0
Vdc
---
0.1 uAdc
hFE-1
DC Current Gain
290
(I _C=1.0mAdc, V_CE=1.0Vdc)
hFE-2
DC Current Gain
300
(I _C=100mAdc, V_CE=1.0Vdc)
h _FE-3
DC Current Gain
300
(I _C=300mAdc, V_CE=1.0Vdc)
h _FE-4
DC Current Gain
300
(I _C=500mAdc, V_CE=1.0Vdc)
V _CE(sat)
Collector-Emitter Saturation Voltage
---
(I _C=600mAdc, I_B=20mAdc)
f_T
Transition Frequency
100
(VCE=10Vdc, IC=50mAdc, f=30MHz)
CLASSIFICATION OF HFE
Rank
B
C
Range
300-550
500-700
1000
---
1000
---
1000
---
1000
---
0.55 Vdc
---
MHz
D
650-1000
B
C
D
G
ECB
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97 14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.096
.104
2.44
2.64
Revision: A
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2011/01/01