KTC4373 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE)

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Low noise
• Excellent hFE linearity
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings
Symbol
Rating
Rating
Unit
V_CEO
V_CBO
V_EBO
I_C
P_C
T_J
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
120
V
120
V


5
0.8
V
A


0.5
W


150
к


T_STG
Storage Temperature
-55 to +150
к




Electrical Characteristics @ 25к Unless Otherwise Specified



Symbol
Parameter
Min
Typ
Max Units

OFF CHARACTERISTICS


I_CBO
Collector Cutoff Current
(V_CB= 120Vdc)
I_EBO
Emitter Cutoff Current
---
---
100
nAdc


---
---
100
nAdc


(V_EB= 5.0Vdc)


ON CHARACTERISTICS


BV_CBO Collector-base breakdown voltage 120
---
---
Vdc

(I_C=1mAdc)


BV_CEO
Collector-emitter breakdown 120
voltage (I_C= 10mAdc)
---
---
Vdc





BV_EBO Emitter-base breakdown voltage
5
---
---
Vdc
(I_E=1mAdc)


h_FE
DC Current Gain
(I_C=0.1Adc, V_CE= 5 .0Vdc)
80
---
240
---
V_CE(sat)
Collector Saturation Voltage
(I_C=0.5Adc, I_B=50mAdc)
--- ---
1
Vdc
C_ob
Output Capacitance
---
---
30
pF
(V_CE= 10.0Vdc, I_E=0, f=1.0MHz)
f_T
Transition frequency
(V_CE=5Vdc, I_C=500mAdc)
---
120
--- MHz
hFE CLASSIFICATION
Rank
Marking
Range
O
CO
80-160
Y
CY
120-240
KTC4373
NPN
Plastic-Encapsulate
Transistors












SOT-89




A

_B
K








E
C


D




G

H
J

^F








1

2
3
1. BASE
2. COLLECTOR
3. EMITTER















 

     




.061



1.55

  




























 

REF.








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