HM4033 Datasheet, PDF (1/2 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
HM4033
Features
x High current for general purpose amplifier application
x SOT-89 package for surface mount application
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
PNP Plastic
Encapsulate
Transistor
Mechanical Data





x Marking:H4033






Maximum Ratings@ Ta=25^OC Unless Otherwise Specified






Symbol
V_CEO
VCBO
V_EBO
IC
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Rating
-80
-80
-5
-1
Unit
V
V
V









A


C
Pc
Collector Power Dissipation
TJ
Junction Temperature
T_STG
Storage Temperature
0.5
-55 to +150
-55 to +150
W
O_C
O_C





^D



G
Electrical Characteristics @ Ta=25^OC Unless Otherwise Specified


Symbol
Parameter
Min Typ Max Units


ICBO
Collector Cutoff Current
(VCB=-60Vdc,IE=0)
-100
nA






IEBO
Emitter Cutoff Current
-100
nA



(V_EB=-5.0Vdc, I_C=0)
V(BR)CBO Collector-Base Breakdown Voltage
(Ic=-10uA, IE=0)
-80
V_(BR)CEO Collector-Emitter Breakdown Voltage
(Ic=-10mA, IB=0)
-80



V


V




V_(BR) EBO Emitter-Base Breakdown Voltage
(IE=-10uA, I_C=0)
-5
V
hFE1
VCE=-5V, IC=-0.1mA
75


hFE2
V _CE=-5V, I_C=-100mA
100
hFE3
hFE4
V_CE(SAT)1
V _CE=-5V, I_C=-500mA
VCE=-5V, IC=-1000mA
I_C=-150mA, I_B=-15mA
70

25

-0.15
V



VCE(SAT)1 IC=-500mA, IB=-50mA
-0.5
V

V_BE(SAT)1 I_C=-150mA, I_B=-15mA
-0.9
V

VBE(SAT)1 IC=-500mA, IB=-50mA
-1.1
V


f_T
Transition Frequency
(V_CE=-10V, I_C=50mA, f=100MHZ)
100
MHZ


Cob
Collector Output Capacitance
(V_CB=-10V, I_E=0, f=1MHZ)
20
pF
SOT-89
A
B
K
E
H
F
J
C
BC E


  

 


 

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2011/01/01