ES2A Datasheet, PDF (1/3 Pages) Jinan Gude Electronic Device – 2.0AMP. SUPER FAST RECOVRY SILICON RECTIFIERS

M C C


































  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
ES2A
THRU
ES2M
F_•
e



a<sub>F


o</sub>t


_ru

_S
r
_u

e<sub>r


fa</sub>

s
<sub>c


e


M


o
unt Applications</sub>
• Extremely Low Thermal Resistance
• Easy Pick And Place
• High Temp Soldering: 250°C for 10 Seconds At Terminals
• Superfast Recovery Times For High Efficiency
Maximum Ratings
• Operating Temperature: -50°C to +150°C
• Storage Temperature: -50°C to +150°C
• Maximum Thermal Resistance; 20°C/W Junction To Lead
MCC
Catalog
Number
ES2A
ES2B
ES2C
ES2D
ES2G
ES2J
ES2K
ES2M
Device
Marking
ES2A
ES2B
ES2C
ES2D
ES2G
ES2J
ES2K
ES2M
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
150V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
105V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
150V
200V
400V
600V
800V
1000V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
ES2A-D
ES2G-K
ES2M
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I_F(AV)
I_FSM
V_F
I_R
2.0A
50A
T_J = 75°C
8.3ms, half sine
.975V
1.35V
1.60V
I_FM = 2.0A;
T_J = 25°C*
5µA T_J = 25°C
150µA T_J = 100°C
Maximum Reverse
Recovery Time
ES2A-D
ES2G-K
T_rr
ES2M
Typical Junction
C_J
Capacitance
50ns
60ns
100ns
25pF
I_F=0.5A, I_R=1.0A,
I_rr=0.25A
Measured at
1.0MHz, V_R=4.0V
*Pulse test: Pulse width 200 µsec, Duty cycle 2%
2 Amp Super Fast
Recovery
Silicon Rectifier
50 to 1000 Volts
DO-214AC
(SMAJ) (High Profile)
H
Cathode Band
J
A
C
E
D
F
G
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.078
.116
B
.067
.089
C
.002
.008
D
---
.02
E
.035
.055
F
.065
.096
G
.205
.224
H
.160
.180
J
.100
.112
MM
MIN
1.98
1.70
.05
---
.89
1.65
5.21
4.06
2.57
B
MAX
2.95
2.25
.20
.51
1.40
2.45
5.69
4.57
2.84
NOTE
SUGGESTED SOLDER
PAD LAYOUT
0.090”
0.085”
0.070”
www.mccsemi.com