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| ER1Q Datasheet, PDF (1/1 Pages) Micro Commercial Components – 1 Amp Super Fast Recovery Silicon Rectifier 1200 to 2000 Volts | |||
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MCC
omponents
21201 Itasca Street Chatsworth
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ER1Q
THRU
ER1ZZ
Features
⢠For Surface Mount Applications
⢠Extremely Low Thermal Resistance
⢠High Temp Soldering: 250°C for 10 Seconds At Terminals
⢠Super Fast Recovery Times For High Efficiency
⢠Gull Wing Lead Bend To Prevent Arcing
⢠Perfect For Ballast, Television And Monitor Applications
Maximum Ratings
⢠Operating Temperature: -50°C to +150°C
⢠Storage Temperature: -50°C to +150°C
⢠Maximum Thermal Resistance; 15°C/W Junction To Lead
MCC
Maximum Maximum Maximum
Part
Device
Recurrent
RMS
DC
Number Marking Peak Reverse Voltage Blocking
Voltage
Voltage
ER1Q
ER1Q
1200V
840V
1200V
ER1V
ER1V
1400V
980V
1400V
ER1Y
ER1Y
1600V
1120V
1600V
ER1Z
ER1Z
1800V
1260V
1800V
ER1ZZ ER1ZZ
2000V
1400V
2000V
lectrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
1.0A TJ = 55°C
Peak Forward Surge
IFSM
Current
30A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
ER1Q-ER1V
VF
ER1Y-ER1ZZ
1.85V IFM = 1.0A;
2.0V TJ = 25°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
5µA TJ = 25°C
30µA TJ = 125°C
Maximum Reverse
Recovery Time
ER1Q-ER1Y
Trr
ER1Z-ER1ZZ
150ns IF=0.5A, IR=1.0A,
300ns Irr=0.25A
Typical Junction
Capacitance
CJ
45pF Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 200 µsec, Duty cycle 2%
1 Amp Super Fast
Recovery
Silicon Rectifier
1200 to 2000 Volts
DO-214AA
(SMBJ) (Round Lead)
H
Cathode Band
J
A
C
E
F
G
D
B
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.078
.116
B
.075
.089
C
.002
.008
D
-----
.02
E
.035
.055
F
.065
.091
G
.205
.224
H
.160
.180
J
.130
.155
MM
MIN
1.98
1.90
.05
-----
.90
1.65
5.21
4.06
3.30
MAX
2.95
2.25
.20
.51
1.40
2.32
5.69
4.57
3.94
SUGGESTED SOLDER
PAD LAYOUT
0.090"
NOTE
0.085â
0.070â
www.mccsemi.com
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