ER1A Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – SURFACE MOUNT SUPERFAST RECTIFIER(VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere)

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• Extremely Low Thermal Resistance
• Easy Pick And Place
• High Temp Soldering: 250°C for 10 Seconds At Terminals
• Superfast Recovery Times For High Efficiency
Maximum Ratings
• Operating Temperature: -50°C to +150°C
• Storage Temperature: -50°C to +150°C
• Maximum Thermal Resistance; 15 °C/W Junction To Lead
MCC
Catalog
Number
ER1A
ER1B
ER1C
ER1D
ER1G
ER1J
ER1K
Device
Marking
ER1A
ER1B
ER1C
ER1D
ER1G
ER1J
ER1K
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
150V
200V
400V
600V
800V
Maximum
RMS
Voltage
35V
70V
105V
140V
280V
420V
560V
Maximum
DC
Blocking
Voltage
50V
100V
150V
200V
400V
600V
800V
ER1M
ER1M
1000V
700V
1000V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
ER1A-D
ER1G-K
ER1M
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I_F(AV)
I_FSM
V_F
I_R
1.0A
30A
T_J = 75°C
8.3ms, half sine
.975V
1.35V
1.60V
I_FM = 1.0A;
T_J = 25°C*
5µA T_J = 25°C
100µA T_J = 100°C
Maximum Reverse
Recovery Time
ER1A-D
ER1G-K
T_rr
ER1M
Typical Junction
C_J
Capacitance
50ns
60ns
100ns
45pF
I_F=0.5A, I_R=1.0A,
I_rr=0.25A
Measured at
1.0MHz, V_R=4.0V
*Pulse test: Pulse width 200 µsec, Duty cycle 2%
1 Amp Super Fast
Recovery
Silicon Rectifier
50 to 1000 Volts
DO-214AA
(SMBJ) (Round Lead)
H
Cathode Band
J
A
C
E
D
F
G
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.078
.116
B
.075
.089
C
.002
.008
D
-----
.02
E
.035
.055
F
.065
.091
G
.205
.224
H
.160
.180
J
.130
.155
MM
MIN
1.98
1.90
.05
-----
.90
1.65
5.21
4.06
3.30
B
MAX
2.95
2.25
.20
.51
1.40
2.32
5.69
4.57
3.94
NOTE
SUGGESTED SOLDER
PAD LAYOUT
0.090"
0.085”
0.070”
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