DTC144TE Datasheet, PDF (1/2 Pages) Rohm – Digital transistors (built in resistor)

MCC
TM
Micro Commercial Components

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20736 Marilla Street Chatsworth

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DTC144TE
Features
• Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors (see equivalent circuit)
• The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input. They also have the
advantage of almost completely eliminating parasitic effects
• Only the on/off conditions need to be set for operation, making
device design easy
Absolute Maximum Ratings
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current-Continuous
Collector Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Value
50
50
5
100
150
150
-55~150
Unit
V
V
V
mA
mW
℃
℃
NPN Digital Transistor
SOT-523
A
D
3
1
2
BC
E
1. Base
2. Emitter
3. Collector
G
H
J
Electrical Characteristics
Sym
Parameter
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
R1
f_T
Collector-Base Breakdown Voltage
(I_C=50uA, I_E=0)
Collector-Emitter Breakdown Voltage
(I_C=1mA, I_B=0)
Emitter-Base Breakdown Voltage
(I_E=50uA, I_C=0)
Collector Cut-off Current
(V_CB=50V, I_E=0)
Emitter Cut-off Current
(V_EB=4V, I_C=0)
DC Current Gain
(V_CE=5V, I_C=1mA)
Collector-Emitter Saturation Voltage
(I_C=10mA, I_B=1mA)
Input resistance
Transition Frequency
(V_CE=10V, I_C=-5mA, f=100MHz)
Min
50
50
5
---
---
100
---
32.9
---
Typ
---
---
---
---
---
300
---
47
250
Max Unit
---
V
---
V
---
V
0.5
uA
0.5
uA
600
---
0.3
V
61.1 KΩ
---
MHz
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.059
.067
1.50
1.70
B
.030
.033
0.75
0.85
C
.057
.069
1.45
1.75
D
.020 Nominal
0.50Nominal
E
.035
.043
0.90
1.10
G
.000
.004
.000
.100
H
.028
.031
.70
0.80
J
.004
.008
.100
.200
K
.010
.014
.25
.35
NOTE
Revision: 1
www.mccsemi.com
2005/06/29