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DTA114TKA Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Digital Transistors
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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DTA114TKA
Features
• Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors (see equivalent circuit)
• The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input. They also have the
advantage of almost completely eliminating parasitic effects
• Only the on/off conditions need to be set for operation, making
device design easy
Absolute Maximum Ratings
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current-Continuous
Collector Dissipation
Junction Temperature Range
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Value
-50
-50
-5
-100
200
-55~150
-55~150
Unit
V
V
V
mA
mW
℃
℃
PNP Digital Transistor
SOT-23-3L
A
D
3
1
2
CB
1. Base
2. Emitter
3. Collector
E
G
H
J
Electrical Characteristics
Sym
Parameter
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
R1
fT
Collector-Base Breakdown Voltage
(IC=-50uA, IE=0)
Collector-Emitter Breakdown Voltage
(IC=-1mA, IB=0)
Emitter-Base Breakdown Voltage
(IE=-50uA, IC=0)
Collector Cut-off Current
(VCB=-50V, IE=0)
Emitter Cut-off Current
(VEB=-4V, IC=0)
DC Current Gain
(VCE=-5V, IC=-1mA)
Collector-Emitter Saturation Voltage
(IC=-10mA, IB=-1mA)
Input Resistor
Transition Frequency
(VCE=-10V, IC=-5mA, f=100MHz)
Min
-50
-50
-5
---
---
100
---
7
---
Typ
---
---
---
---
---
250
---
10
250
Max
---
---
---
-0.5
-0.5
600
-0.3
13
---
Unit
V
V
V
uA
uA
---
V
KΩ
MHz
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.113
.117
2.87
2.97
B
.108
.112
2.75
2.85
C
.061
.065
1.55
1.65
D
.036
.038
.925
.975
E
.073
.077
1.85
1.95
G
.0016
.0039
.04
.100
H
.044
.049
1.12
1.25
J
.006
.007
.14
.17
K
.013
.015
.34
.37
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.087
2.200
inches
mm
.037
.950
.037
.950
Revision: 1
www.mccsemi.com
2005/06/29