DTA114TE Datasheet, PDF (1/3 Pages) Rohm – Digital transistors (built in resistor)

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DTA114TE
Features
• Case Material:Molded Plastic. UL Flammability Classification
Rating 94V-0 and MSL Rating 1
x Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors (see equivalent circuit)
x The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input. They also have the
advantage of almost completely eliminating parasitic effects
x Only the on/off conditions need to be set for operation, making
device design easy
Absolute Maximum Ratings
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current-Continuous
Collector Dissipation
Junction Temperature Range
Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Value
-50
-50
-5
-100
150
-55~150
-55~150
Electrical Characteristics
Sym
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
R₁
f_T
Parameter
Collector-Base Breakdown Voltage
(I_C=-50uA, I_E=0)
Collector-Emitter Breakdown Voltage
(I_C=-1mA, I_B=0)
Emitter-Base Breakdown Voltage
(I_E=-50uA, I_C=0)
Collector Cut-off Current
(V_CB=-50V, I_E=0)
Emitter Cut-off Current
(V_EB=-4V, I_C=0)
DC Current Gain
(V_CE=-5V, I_C=-1mA)
Collector-Emitter Saturation Voltage
(I_C=-10mA, I_B=-1mA)
Input Resistor
Transition Frequency
(V_CE=-10V, I_C=-5mA, f=100MHz)
*Marking: 94
Min
-50
-50
-5
---
---
100
---
7
---
Typ
---
---
---
---
---
250
---
10
250
Unit
V
V
V
mA
mW
к
к
Max
---
---
---
-0.5
-0.5
600
-0.3
13
---
Unit
V
V
V
uA
uA
---
V
K¡
MHz
PNP Digital Transistor
SOT-523
A
D
3
1
2
BC
E
1. Base
2. Emitter
3. Collector
G
H
J
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.059
.067
1.50
1.70
B
.030
.033
0.75
0.85
C
.057
.069
1.45
1.75
D
.020 Nominal
0.50Nominal
E
.035
.043
0.90
1.10
G
.000
.004
.000
.100
H
.028
.031
.70
0.80
J
.004
.008
.100
.200
K
.010
.014
.25
.35
NOTE
Revision: 3
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2009/02/11