DMMT5551 Datasheet, PDF (1/2 Pages) Diodes Incorporated – MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
Features
• Surface Mount SOT-363 Package
• 200mWatts of Power Dissipation
• Ideal for Medium Power Amplification and Switching
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
x Marking:K4R
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
VCEO
VCBO
VEBO
IC
PD
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Power Dissipation---
Operating Junction Temperature
Storage Temperature
Rating
Unit
160
V
180
V
6.0
V
0.2
A
0.2
W
-55 to +150
к
-55 to +150
к
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IEBO
ICBO
Co((IlI_Cl_Ce==c--t1o1mr_.0-AE_{mdmAci,dttIceB,r=IB0B=)r-}e0_-a_-)-k_--d_-o_--w_--n_---V_--o_-l_-t_-a_-g_--e_{------------160}
Collector-Base Breakdown Voltage
(IC=100µA, IE=0)
180
Emitter-Base Breakdown Voltage
(IE=10µAdc, IC=0)
6.0
Emitter Cutoff Current
(VEB=4Vdc, IC=0)
Collect Cutoff Current
(VCB=120Vdc, IE=0)
---
Vdc
Vdc
Vdc
50
nAdc
50
nAdc
ON CHARACTERISTICS
hFE
DC Current Gain*
(IC=1mAdc, VCE=5.0Vdc)
80
(IC=10mAdc, VCE=5.0Vdc)
80
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
VBE(sat)
Base-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=10mAdc, VCE=10Vdc, f=100MHz)
100
Cobo
Output Capacitance
(VCB=10Vdec, IE=0, f=1.0MHz)
Noise figure
Rg=1kohm
VCE=5Vdec, IC=200uA, f=1KHz,R=1kOHM
250
0.15 Vdc
1.0
Vdc
300
6.0
8.0
MHz
pF
NF
DMMT5551
Plastic-Encapsulate
Transistors
SOT-363
G
K
F
A
H
D
B
C
E₁
E₂
C₂
C₁
B₁
B₂
M
J
L
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.004
.012
0.10
0.30
B
.045
.053
1.15
1.35
C
.079
.087
2.00
2.20
D
.026
0.65Nominal
F
.012
.016
0.30
0.40
H
.071
.087
1.80
2.20
J
---
.004
---
0.10
K
.035
.039
0.90
1.00
L
.010
.016
0.25
0.40
M
.004
.016
0.10
0.25
Revision: 3
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2008/01/01