DB3_11 Datasheet, PDF (1/3 Pages) Micro Commercial Components – SILICON BIDIRECTIONAL DIAC

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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Features
l The three layer, two terminal, axial lead, hermetically sealed
diacs are designed specifically for triggering thyristors.
• Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
• Moisture Sensitivity: Level 1
l These diacs are intended for use in thyrisitors phase control ,
circuits for lamp dimming, universal motor speed control ,and
heat control. Type number is marked.
Maximum Ratings
l Operating Temperature: -40^oC to +125^oC
l Storage Temperature: -40^oC to +125^oC
l Thermal Resistance Junction to Lead:167 ^oC/W
l Thermal Resistance Junction to Ambient: 400 ^oC/W
Electrical Characteristics @ 25^oC Unless Otherwise Specified
Power dissipation
on Printed
Circuit(l=10mm)
Repetitive Peak
on-state Current
DB3,DC34,DB4
Breakover Voltage
DB3
DC34
DB4
P_C
I_TRM
V_BO
150mW
T_A=65^oC
2.0A ^{tp=10us, f=100HZ}
Min Typ Max
28 32 36V
30 34 38V
C=22nF(Note 3)
35 40 45V
Dynamic Breakover
Voltage(Note 2)
ΔV
5V(Min.) VBO and VF at10mA
Breakover Voltage
Symmetry
| + V_BO |
DB3, DC34, DB4 -|-V_BO|
Output
Voltage(Note 2)
V_o(min)
Breakover
Current(Note 2)
I_BO(max)
±3V
5V
100uA
C=22nF(Note 3)
C=22nF
Rise Time(Note 2) T_r
1.5us
Leakage
Current(Note 2)
I_B(max)
10uA
V_B =0.5V_BO(max)
Note:
1. Lead in Glass Exemption Applied, see EU Directive Annex 5.
2. Electrical characteristics applicable in both forward and
reverse directions.
3. Connected in parallel with the devices.
DB3/DC34
AND
DB4
SILICON
BIDIRECTIONAL
DIAC
DO-35G
D
A
B
D
C
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
A
---
.150
---
B
---
.079
---
C
---
.020
---
D
1.083
---
27.50
MAX
3.8
2.00
.52
---
NOTE
Revision: B
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2011/06/20