DB3TG Datasheet, PDF (1/3 Pages) STMicroelectronics – DIAC

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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Features
The three layer, two terminal, axial lead, hermetically sealed
diacs are designed specifically for triggering thyristors.
• Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
• Moisture Sensitivity: Level 1 per J-STD-020C
Intended for use in thyrisitors phase control ,
circuits for lamp dimming, universal motor speed control ,and
heat control.
Maximum Ratings
Operating Temperature: -40^oC to +125^oC
Storage Temperature: -40^oC to +125^oC
Thermal Resistance Junction to Lead:167 ^oC/W
Thermal Resistance Junction to Ambient: 400^oC/W
Electrical Characteristics @ 25^oC Unless Otherwise Specified
Power dissipation
on Printed
P_C 150mW
Circuit(l=10mm)
T_A=65^oC
Repetitive Peak
on-state Current _ITRM
2.0A
t _p=10us,f=120Hz
Breakover Voltage
Min Typ Max
V_BO ^{30 32 34V} C=22nF(Note 3)
Breakover Voltage
Symmetry
| + V_BO |
-|-V _BO|
±2V
C=22nF(Note 3)
Output
Voltage(Note 2)
V_o(min)
5V
Dynamic breakover
voltage ( N o t e 2 )
∆V
9V(Min)
V_BO and V_F at
10mA
Breakover
Current(Note 2)
I_BO(max)
15uA
C=22nF
Rise Time(Note 2) T_r 2us(max)
Leakage
Current(Note 2)
I_B(max)
10uA
V_B =0.5V_BO(max)
Note:
1. Lead in Glass Exemption Applied, see EU Directive Annex 5.
2. Electrical characteristics applicable in both forward and
reverse directions.
3. Connected in parallel with the devices.
DB3TG
SILICON
BIDIRECTIONAL
DIAC
DO-35G
D
A
B
D
C
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
A
---
.150
---
B
---
.079
---
C
---
.020
---
D
1.083
---
27.50
MAX
3.8
2.00
.52
---
NOTE
Revision: B
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2011/06/21