D965-T_11 Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Plastic-Encapsulate Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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D965-T
D965-R
Features
• Power Dissipation: P_CM=0.75W @ T_amb=25ć
• Collector Current: I_CM=5A
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
x Marking: D965T/R
• Lead Free Finish/Rohs Compliant ("P"Suffix designates
Compliant. See ordering information)
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PD
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Total Device Dissipation
Operating Junction Temperature
Storage Temperature
Rating
Unit
22
V
42
V
6.0
V
5
A
750
mW
-55 to +150
к
-55 to +150
к
NPN
Plastic-Encapsulate
Transistors
TO-92
A
E
B
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=10mAdc, IB=0)
22
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100µAdc, IE=0)
42
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100µAdc, IC=0)
6.0
ICBO
Collector Cutoff Current
(VCB=20Vdc, IE=0)
---
IEBO
Base Cutoff Current
(VEB=3.0Vdc, IC=0)
---
HFE
DC Current Gain ( VCE=2V, IC=0.15mA)
150
( VCE=2V, IC=500mA)
340
( VCE=2V, IC=2000mA) 150
VCE(sat)
Collector-emitter Saturation Voltage
(IC=3000mA, IB=100mA)
---
---
Vdc
---
Vdc
---
Vdc
100 nAdc
100 nAdc
---
950
---
0.35
V
Classification of HFE @ ( VCE=2V, IC=500mA)
Rank
Range
R
340-600
T
560-950
C
D
EC
B
G
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97 14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.096
.104
2.44
2.64
Revision: A
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2011/01/01