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CXT5401 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT PNP SILICON TRANSISTOR
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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CXT5401
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
x Switching and amplification in high voltage Applications such as telephony
x Epoxy meets UL 94 V-0 flammability rating
x Moisure Sensitivity Level 1
Maximum Ratings
Symbol
Rating
Value
Unit
VCEO
VCBO
VEBO
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
150
160
V
V

5.0
V

IC
Collector Current DC
0.5
A

PC
Collector Power Dissipation
TJ
Junction Temperature
TSTG
Storage Temperature
0.5
W
150
OC
-65 to +150
OC
Electrical Characteristics @ 25qC Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
VCBO
VCEO
Collector-Base Voltage
(IC=100uAdc, IE=0)
Collector-Emitter Voltage
(IC=1mAdc, IB=0)
160
---
---
Vdc
150 ---
---
Vdc









VEBO
ICBO
Emitter-Base Voltage
(IE=10uAdc, IC=0)
Collector Cutoff Current
(VCB=120Vdc, IE=0)
5.0
---
---
Vdc 

---
---
50 nAdc 
IEBO
hFE(1)
Emitter Cutoff Current
(VEB=3.0Vdc, IC=0)
DC Current Gain
(VCE=5.0Vdc, IC=1mAdc)
---
--- 50 nAdc 


50
---
---
--- 
hFE(2)
hFE(3)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
Cob
NF
DC Current Gain
(VCE=5.0Vdc, IC=10mAdc)
DC Current Gain
(VCE=5.0Vdc, IC=50mAdc)
Collector-Emitter Saturation Voltage
(IC=10mAdc,IB=1mAdc)
Collector-Emitter Saturation Voltage
(IC=50mAdc,IB=5mAdc)
Base-Emitter Voltage
(IC=10mAdc,IB=1mAdc)
Base-Emitter Voltage
(IC=50mAdc,IB=5mAdc)
Transition Frequency
(VCE=10Vdc, IC=10mAdc,
f=100MHz)
C(VolCleB=ct1o0rVoduct,pIuEt=0c,-a-p-f=a1cMitaHnzc)e
Noise figure
(VCE=5Vdc, IC=0.2mAdc,
f=10MHz-15.7KHZ,Rs=10ohm)

60
--- 300
---
50
---
---
---
---
--- 0.2
Vdc
---
--- 0.5
Vdc
---
---
1
Vdc
---
---
1
Vdc
100 --- 300 MHz
---
---
6
pF
---
---
8
dB
PNP
Plastic-Encapsulate
Transistors



 SOT-89





A
B
K




E
C

D


G
H
J
F




1
2
1. BASE
3
2. COLLECTOR
3. EMITTER












 


 

 




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