BF421 Datasheet, PDF (1/2 Pages) Motorola, Inc – High Voltage Transistors(PNP)

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BF421
BF423
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Capable of 0.83Watts of Power Dissipation.
• Collector-current 0.1A
• Collector-base Voltage: BF421 300V
BF423 250V
• Operating and storage junction temperature range: -55^OC to +150^OC
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Marking: Type Number
PNP Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V _(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
BF421
300
BF423
250
V(BR)CBO
Collector-Base Breakdown Voltage
(I _C=100uAdc, I_E=0)
BF421 300
BF423 250
V_(BR)EBO
Emitter-Base Breakdown Voltage
5.0
(I _E=100uAdc, I_C=0)
I _CBO
Collector Cutoff Current
---
(V _CB=200Vdc, I_E=0)
I_EBO
Emitter Cutoff Current
---
(V _EB=5.0Vdc, I_C=0)
ON CHARACTERISTICS
---
Vdc
---
---
Vdc
---
---
Adc
0.01 uAdc
0.05 uAdc
h _FE
DC Current Gain
50
---
---
(IC=25mAdc,V CE=20Vdc)
V _CE(sat)
Collector-Emitter Saturation Voltage
---
0.6
Vdc
(IC=30mAdc, IB=5.0mAdc)
fT
Transition Frequency
60
---
MHz
(VCE=10Vdc, IC=10mA dc, f=100MHz)
B
C
D
EC
G
B
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97 14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.096
.104
2.44
2.64
Revision: A
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2011/01/01