BD882-R Datasheet, PDF (1/3 Pages) Micro Commercial Components – Silicon NPN epitaxial planer Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
BD882-R
BD882-O
BD882-Y
BD882-GR
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Marking: D882
Maximum Ratings @ 25^OC Unless Otherwise Specified
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Dissipation
Operating Junction Temperature
Storage Temperature
Rating
Unit
30
V
40
V
6
V
3
A
0.5
W
150
к
-55 to +150
к
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
Parameter
Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
Collector-Emitter Breakdown Voltage
(IE=100uAdc, IC=0)
Collector Cutoff Current
(VCB=40Vdc, IE=0)
Collector Cutoff Current
(VCB=30Vdc, IB=0)
Emitter Cutoff Current
(VEB=6Vdc, IC=0)
DC Current Gain
(IC=1Adc, VCE=2Vdc)
Min Typ Max Units
30 ---
--- Vdc
40 ---
--- Vdc
6
---
--- Vdc
--- ---
1 uAdc
--- ---
10 uAdc
---
---
1 uAdc
60 ---- 400
VCE(sat)
VBE(sat)
ft
Collector-Emitter Saturation Voltage
(IC=2Adc, IB=0.2Adc)
Base-Emitter Saturation Voltage
(IC=2Adc, IB=0.2Adc)
Transition frequency
(VCE=5Vdc, f=10MHz, IC=0.1A)
--- ---- 0.5 Vdc
--- ---- 1.5 Vdc
50
---
--- MHz
CLASSIFICATION OF hFE
Rank
R
O
Range
60-120
100-200
Y
160-320
GR
200-400
Silicon
NPN epitaxial planer
Transistors






























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2011/01/01