BD772-R Datasheet, PDF (1/3 Pages) Micro Commercial Components – PNP Silicon Plastic-Encapsulate Transistor

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
BD772-R
BD772-O
BD772-Y
BD772-GR
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Capable of 0.5Watts of Power Dissipation.
• Collector-current 3.0A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55^OC to +150^OC
• Marking: B772
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V _(BR)CEO
V _(BR)CBO
V _(BR)EBO
I _CBO
I_CEO
IEBO
Collector-Emitter Breakdown Voltage
(IC=-10mAdc, IB=0)
Collector-Base Breakdown Voltage
(I_C=-100uAdc, I_E=0)
Emitter-Base Breakdown Voltage
(I_E=-100uAdc, I_C=0)
Collector Cutoff Current
(V_CB=-40Vdc, I_E=0)
Collector Cutoff Current
(V_CE=-30Vdc, I_B=0)
Emitter Cutoff Current
(V_EB=-6.0Vdc, I_C=0)
ON CHARACTERISTICS
h _FE(1)
V _CE(sat)
V _BE(sat)
DC Current Gain
(IC=-1.0Adc, VCE=-2.0Vdc)
Collector-Emitter Saturation Voltage
(I_C=-2.0Adc, I_B=-0.2Adc)
Base-Emitter Saturation Voltage
(I_C=-2.0Adc, I_B=-0.2Adc)
-30
---
Vdc
-40
---
Vdc
-5.0
---
Vdc
---
-1.0
uAdc
---
-10 uAdc
---
-1.0 uAdc
60
400
---
---
-0.5
Vdc
---
-1.5
Vdc
SMALL-SIGNAL CHARACTERISTICS
f_T
Transistor Frequency
(I _C=-0.1Adc, V_CE=-5.0Vdc, f=10MHz)
80
---
MHz
CLASSIFICATION OF HFE (1)
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
PNP Silicon
Plastic-Encapsulate
Transistor











































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Revision: A
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2011/01/01