 English |
|
|
|
|
|
|
|
| BCX52 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulate Transistors | |||
| |||
|
MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
BCX52
BCX52-10
BCX52-16
Features
⢠Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
x Power Dissipation: PCM=0.5W (Tamb=25к)
x Collector Current: ICM=-1.0A
x Collector-Base Voltage: V(BR)CBO=-60V
x Marking Code: BCX52=AE, BCX52-10=AG, BCX52-16=AM
⢠Epoxy meets UL 94 V-0 flammability rating
⢠Moisure Sensitivity Level 1
Maximum Ratings
Symbol
Rating
Value
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
PC
TJ
TSTG
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Current DC
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
-60
V
-60
V
-5
V
-1.0
A
0.5
W
-55 to +150
OC
-55 to +150
OC
Electrical Characteristics @ 25qC Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(on)
fT
Collector-Base Breakdown Voltage
(IC=-100uA, IE=0)
-60
---
---
V
Collector-Emitter Breakdown Voltage
(IC=-1mA, IB=0)
-60
---
---
V
Emitter-Base Breakdown Voltage
(IE=-100uA, IC=0)
Collector Cutoff Current
(VCB=-30V, IE=0)
Emitter Cutoff Current
(VEB=-5.0V, IC=0)
DC Current Gain
-5
---
---
V
---
---
-0.1 uA
---
---
-0.1
uA
(VCE=-2.0V, IC=-150mA)
BCX52 63
--- 250 ---
BCX52-10 63
--- 160
BCX52-16 100 --- 250
DC Current Gain
(VCE=2.0V, IC=-5.0mA)
63
DC Current Gain
(VCE=-2.0V, IC=-500mA)
40
Collector-Emitter Saturation Voltage
(IC=-500mA,IB=-50mA)
---
--- -0.5
V
Base-Emitter Voltage
(IC=-500mA, VCE=-2.0V)
---
---
-1
V
Transition Frequency
(VCE=-5V, IC=-10mA,
f=100MHz)
--- 50 --- MHz
PNP
Plastic-Encapsulate
Transistors
C
D
G
SOT-89
A
B
E
H
F
B
K
J
CE
.061
1.55
REF.
25
Revision: A
www.mccsemi.com
1 of 3
2011/01/01
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese