BCX51 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP medium power transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
BCX51
BCX51-10
BCX51-16
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
x Power Dissipation: P_CM=0.5W (T_amb=25к)
x Collector Current: I_CM=-1.0A
x Collector-Base Voltage: V_(BR)CBO=-45V
x Marking Code: BCX51=AA, BCX51-10=AC, BCX51-16=AD
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings
Symbol
Rating
Value
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
PC
TJ
TSTG
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Current DC
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
-45
V
-45
V
-5
V
-1.0
A
0.5
W
-55 to +150
O_C
-55 to +150
O_C
Electrical Characteristics @ 25qC Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(on)
fT
Collector-Base Breakdown Voltage
(IC=-100uA, IE=0)
-45
---
---
V
Collector-Emitter Breakdown Voltage
(IC=-1mA, IB=0)
-45
---
---
V
Emitter-Base Breakdown Voltage
(IE=10uA, IC=0)
Collector Cutoff Current
(VCB=-30V, IE=0)
-5
---
---
V
---
---
-0.1 uA
Emitter Cutoff Current
(VEB=-5.0V, IC=0)
DC Current Gain
---
---
-0.1
uA
(VCE=-2.0V, IC=-150mA)
BCX51 63
--- 250 ---
BCX51-10 63
--- 160
BCX51-16 100 --- 250
DC Current Gain
(VCE=2.0V, IC=-5.0mA)
63
DC Current Gain
(VCE=-2.0V, IC=-500mA)
40
Collector-Emitter Saturation Voltage
(IC=-500mA,IB=-50mA)
Base-Emitter Voltage
(IC=-500mA, VCE=-2.0V)
---
--- ^-0.5
V
---
---
-1
V
Transition Frequency
(VCE=-5V, IC=-10mA,
f=100MHz)
50 --- --- MHz
PNP
Plastic-Encapsulate
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2011/01/01