English
Language : 

BCW68G Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier
MCC
  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
Features
l Ideally Suited for Automatic Insertion
l 150oC Junction Temperature
l Low Current, Low Frequency
l Epitaxial Planar Die Construction
Mechanical Data
l Case: SOT-23, Molded Plastic
l Terminals: Solderable per MIL-STD-202, Method 208
l Marking: DG
l Weight: 0.008 grams ( approx.)
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic
Symbol Value Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
VCEO
-45
V
VCBO
-60
V
VEBO
-5
V
Collector Current(DC)
Peak Collector Current
Base Current(DC)
Peak Base Current
Power Dissipation@Ts=79oC
Thermal Resistance, Junction to
Ambient Air
Thermal Resistance, Junction to
Soldering Point
Operating & Storage Temperature
IC
-800 mA
ICM -1000 mA
IB
-100 mA
IBM
-200 mA
Pd
330 mW
RθJA
285(1) oC/W
RθJS
215 oC/W
Tj, TSTG -55~150 oC
Notes:
(1) Valid provided that leads are kept at
ambient temperature.
BCW68G
PNP Small
Signal Transistor
330mW
SOT-23
A
D
CB
F
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.098
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
www.mccsemi.com