BC807-25-TP Datasheet, PDF(1/3 Page) Micro Commercial Components – PNP Silicon General Purpose Transistors

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BC807-25-TP Datasheet, PDF (1/3 Pages) Micro Commercial Components – PNP Silicon General Purpose Transistors

MCC

TM

Micro Commercial Components

omponents

20736 Marilla Street Chatsworth

!"#

$ % !"#

Features

â¢ Halogen free available upon request by adding suffix "-HF"

â¢ Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

â¢ Capable of 0.3Watts of Power Dissipation.

â¢ Collector-current 0.5A

â¢ Collector-base Voltage 50V

â¢ Operating and storage junction temperature range: -55OC to +150OC

â¢ Epoxy meets UL 94 V-0 flammability rating

â¢ Moisure Sensitivity Level 1

Mechanical Data

â¢ Case: SOT-23 Molded Plastic

â¢ Terminals: Solderable per MIL-STD-202, Method 208

â¢ Weight: 0.008 grams (approx.)

â¢ Device Marking: BC807-16

5A

BC807-25

5B

BC807-40

5C

Electrical Characteristics @ 25OC Unless Otherwise Specified

Symbol

Parameter

Min

Max Units

OFF CHARACTERISTICS

V(BR)CEO Collector-Emitter Breakdown Voltage

45

(IC=10mAdc, IB=0)

V(BR)CBO Collector-Base Breakdown Voltage

50

(IC=10uAdc, IE=0)

V(BR)EBO Collector-Emitter Breakdown Voltage

5.0

(IE=1.0uAdc, IC=0)

ICBO

Collector Cutoff Current

---

(VCB=45Vdc,IE=0)

ICEO

Collector Cutoff Current

---

(VCE=40V dc,IE=0)

IEBO

Emitter Cutoff Current

---

(VEB=4.0Vdc, IC=0)

ON CHARACTERISTICS

hFE(1)

DC Current Gain

(IC=100mAdc, VCE=1.0Vdc)

BC807-16

100

BC807-25

160

BC807-40

250

hFE(2)

DC Current Gain

40

(IC=500mAdc, VCE=1.0Vdc)

VCE(sat) Collector-Emitter Saturation Voltage

---

(IC=500mAdc, IB=50mAdc)

V BE(sat)

Base-Emitter Saturation Voltage

---

(IC=500mAdc,IB=50mAdc)

---

Vdc

---

Vdc

---

Vdc

0.1

uAdc

0.2

uAdc

0.1

uAdc

250

---

400

---

600

---

---

---

0.7 Vdc

1.2 Vdc

RÎ¸JA

TA = 25Â°C

---

403 Â°C/W

SMALL SIGNAL CHARACTERISTICS

fT

Current-Gain-Bandwidth Product

100

---

MHz

(VCE=5.0V, f=100MHz, IC=10mA)

BC807-16

BC807-25

BC807-40

PNP Silicon

General Purpose

Transistors

SOT-23

A

D

3

C

CB

F

E

B

E

G

H

J

K

DIMENSIONS

INCHES

MM

DIM

MIN

MAX

MIN

MAX

A

.110

.120

2.80

3.04

B

.083

.104

2.10

2.64

C

.047

.055

1.20

1.40

D

.035

.041

.89

1.03

E

.070

.081

1.78

2.05

F

.018

.024

.45

.60

G

.0005

.0039

.013

.100

H

.035

.044

.89

1.12

J

.003

.007

.085

.180

K

.015

.020

.37

.51

NOTE

Suggested Solder

Pad Layout

.031

.800

.035

.900

.079

2.000

inches

mm

.037

.950

.037

.950

Revision: D

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1 of 3

2013/06/04

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