BC807-16W Datasheet, PDF(1/4 Page) Siemens Semiconductor Group – PNP Silicon AF Transistor (For general AF applications High collector current High current gain)

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BC807-16W Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – PNP Silicon AF Transistor (For general AF applications High collector current High current gain)

MCC

TM

Micro Commercial Components

omponents

20736 Marilla Street Chatsworth

!"#

$ % !"#

Features

â¢ Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

â¢ Epoxy meets UL 94 V-0 flammability rating

â¢ Moisure Sensitivity Level 1

â¢ Capable of 0.2Watts of Power Dissipation.

â¢ Collector-current 0.5A

â¢ Operating and storage junction temperature range: -55OC to +150OC

Mechanical Data

â¢ Case: SOT-323 Molded Plastic

â¢ Terminals: Solderable per MIL-STD-202, Method 208

â¢ Weight: 0.005 grams (approx.)

â¢ Device Marking: BC807-16W

5A

BC807-25W

5B

BC807-40W

5C

Electrical Characteristics @ 25OC Unless Otherwise Specified

Symbol

Parameter

Min

Max Units

OFF CHARACTERISTICS

V(BR)CEO Collector-Emitter Breakdown Voltage

45

(IC=10mAdc, IB=0)

V(BR)CBO Collector-Base Breakdown Voltage

50

(IC=10uAdc, IE=0)

V(BR)EBO Collector-Emitter Breakdown Voltage

5.0

(IE=1.0uAdc, IC=0)

ICBO

Collector Cutoff Current

---

(VCB=20Vdc,IE=0)

ICEO

Collector Cutoff Current

---

(VCE=20V dc,IB=0)

IEBO

Emitter Cutoff Current

---

(VEB=5.0Vdc, IC=0)

---

Vdc

---

Vdc

---

Vdc

0.1

uAdc

0.2

uAdc

0.1

uAdc

ON CHARACTERISTICS

hFE(1)

DC Current Gain

(IC=100mAdc, VCE=1.0Vdc)

BC807-16W

BC807-25W

BC807-40W

100

250

---

160

400

---

250

600

---

hFE(2)

V CE(sat)

V BE(on)

DC Current Gain

(IC=500mAdc, VCE=1.0Vdc)

Collector-Emitter Saturation Voltage

(IC=500mAdc, IB=50mAdc)

Base-Emitter Voltage

(IC=500mAdc,VCE=1Vdc)

40

---

---

---

0.7 Vdc

---

1.2 Vdc

SMALL SIGNAL CHARACTERISTICS

fT

Current-Gain-Bandwidth Product

80

---

MHz

(VCE=5.0V, f=100MHz, IC=10mA)

Cob

Collector output capacitance

10

pF

(VCB=10V, f=1MHz)

BC807-16W

BC807-25W

BC807-40W

PNP Silicon

General Purpose

Transistors

SOT-323

A

D

C

BC

F

E

B

E

G

H

J

K

DIMENSIONS

INCHES

MM

DIM

MIN

MAX

MIN

MAX

A

.071

.087

1.80

2.20

B

.045

.053

1.15

1.35

C

.079

.087

2.00

2.20

D

.026 Nominal

0.65Nominal

E

.047

.055

1.20

1.40

F

.012

.016

.30

.40

G

.000

.004

.000

.100

H

.035

.039

.90

1.00

J

.004

.010

.100

.250

K

.012

.016

.30

.40

NOTE

0.70

0.90

1.90

MM

0.65

0.65

Revision: A

www.mccsemi.com

1 of 4

2011/01/01

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