BC639-10 Datasheet, PDF (1/3 Pages) Micro Commercial Components – NPN Epitaxial Silicon Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
BC639-10
BC639-16
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Marking: BC639
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
80
V
100
V
5.0
V
1.0
A
1
W
-55 to +150
к
-55 to +150
к
NPN Epitaxial
Silicon Transistors
TO-92
A
E
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=1mAdc,IB=0)
80
--- ---
Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=100­Adc,IE=0)
100
---
---
Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=100­Adc,IC=0)
5.0
---
---
Vdc
ICBO
Collector Cutoff Current
(VCB=30Vdc, IE=0)
---
--- 0.1 ­Adc
IEBO
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
---
--- 0.1 ­Adc
hFE
DC Current Gain
(VCE=2Vdc, IC=5mAdc)
25
--- ---
---
(VCE=2Vdc, IC=150mAdc) _BC639-10 63
--- 160
---
(VCE=2Vdc, IC=150mAdc) _BC639-16 100 --- 250
---
(VCE=2Vdc, IC=500mAdc)
25
--- ---
---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=500mAdc,IB=50mAdc)
---
--- 0.5 Vdc
VBE
Base-Emitter Voltage
(IC=500mAdc, VCE=2Vdc)
---
--- 1.0 Vdc
fT
Transition Frequency
(VCE=5.0Vdc, IC=50mAdc, f=100MHz) 100
---
---
MHz
C
D
E
G
CB
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97
14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.096
.104
2.44
2.64
Revision: A
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2011/01/01