BC556 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amplifier Transistors

MCC

  omponents
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Features
l Through Hole Package
l 150^oC Junction Temperature
Pin Configuration
Bottom View
CB E
Mechanical Data
l Case: TO-92, Molded Plastic
l Polarity: indicated as above.
Maximum Ratings @ 25^oC Unless Otherwise Specified
Charateristic
Symbol Value Unit
Collector-Emitter Voltage BC556
-65
BC557 V_CEO -45
V
BC558
-30
Collector-Base Voltage BC556
-80
BC557 V_CBO -50
V
BC558
-30
Emitter-Base Voltage
V_EBO -5.0
V
Collector Current(DC)
Power Dissipation@T_A=25^oC
Power Dissipation@T_C=25^oC
Thermal Resistance, Junction to
Ambient Air
I_C -100 mA
P_d
625 ^mW
5.0 mW/^oC
P_d
1.5 ^W
12 mW/^oC
R_qJA
200 ^o_C/W
Thermal Resistance, Junction to
Case
R_{qJC 83.3} ^o_C/W
Operating & Storage Temperature T_j, T_STG -55~150 ^oC
BC556,B
BC557,A,B,C
BC558,B
PNP Silicon
Amplifier Transistor
625mW
TO-92
A
E
B
C
D
G
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.175
.185
B
.175
.185
C
.500
---
D
.016
.020
E
.135
.145
G
.095
.105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
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