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BC337-16 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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Features
x Capable of 0.625Watts of Power Dissipation.
x Collector-current 0.8A
x Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338)
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Maximum Ratings
x Operating temperature : -55к to +150к
x Storage temperature : -55к to +150к
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
BC337
45
BC338
25
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100µAdc, IE=0)
---
Vdc
---
Vdc
V(BR)EBO
ICBO
ICEO
IEBO
BC337
BC338
Collector-Emitter Breakdown Voltage
(IE=10µAdc, IC=0)
Collector Cutoff Current
(VCB=45Vdc,IE=0)
(VCB=25Vdc,IE=0)
BC337
BC338
Collector Cutoff Current
(VCE=40Vdc,IB=0)
(VCE=20Vdc,IB=0)
BC337
BC338
Emitter Cutoff Current
(VEB=4.0Vdc, IC=0)
ON CHARACTERISTICS
hFE(2)
VCE(sat)
VBE(sat)
DC Current Gain
(IC=300mAdc, VCE=1.0Vdc)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
Base-Emitter Saturation Voltage
(IC=500mAdc,IB=50mAdc)
SMALL SIGNAL CHARACTERISTICS
fT
Current-Gain-Bandwidth Product
(VCE=5.0V, f=100MHz, IC=10mA)
hFE CLASSIFICATION
Classification
16
hFE(1)
Marking Code
100~250
A 011
50
30
5.0
---
---
---
---
---
60
---
---
210
25
160~400
B 011
---
Vdc
µAdc
0.1
0.1
µAdc
0.2
0.2
0.1
µAdc
---
--
0.7
Vdc
1.2
Vdc
---
MHz
40
250~630
C 011
BC337-16/25/40
BC338-16/25/40
NPN
Plastic-Encapsulate
Transistors
TO-92
A
E
B
C
12 3
D
1.COLLECTOR
2.BASE
3.EMITTER
G
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.170
.190
B
.170
.190
C
.550
.590
D
.010
.020
E
.130
.160
G
.010
.104
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
Revision: 4
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2006/05/18