BAV99 Datasheet, PDF(1/2 Page) NXP Semiconductors – High-speed double diode

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BAV99 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

MCC

omponents

21201 Itasca Street Chatsworth

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$ % !"#

Features

â¢ Low Current Leakage

â¢ Low Cost

â¢ Small Outline Surface Mount Package

Pin Configuration

Top View

A7

C/A

A

C

Maximum Ratings

â¢ Operating Temperature: -55Â°C to +150Â°C

â¢ Storage Temperature: -55Â°C to +150Â°C

â¢ Maximum Thermal Resistance; 357K/W Junction To Ambient

BAV99

350mW 75Volt

Dual Series

Switching Diode

SOT-23

A

D

CB

F

E

Electrical Characteristics @ 25Â°C Unless Otherwise Specified

Reverse Voltage

Average Rectified

Output Current

VR

75V

IO

150mA

Power Dissipation

Peak Forward Surge

Current

PTOT

IFSM

350mW

1.0A t=1s,Non-Repetitive

Maximum

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

VF

855mV IFM = 10mA;

TJ = 25Â°C*

VR=75Volts

IR

2.5ÂµA TJ = 25Â°C

50ÂµA TJ = 150Â°C

Typical Junction

CJ

2.0pF Measured at

Capacitance

1.0MHz, VR=0V

Reverse Recovery

Trr

4nS IF=10mA

Time

VR = 0V

RL=500â¦

*Pulse test: Pulse width 300 Âµsec, Duty cycle 2%

G

H

J

DIMENSIONS

INCHES

DIM

MIN

MAX

A

.110

.120

B

.083

.098

C

.047

.055

D

.035

.041

E

.070

.081

F

.018

.024

G

.0005

.0039

H

.035

.044

J

.003

.007

K

.015

.020

MM

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

Suggested Solder

Pad Layout

.031

.800

NOTE

.035

.900

.079

2.000

inches

mm

.037

.950

.037

.950

www.mccsemi.com

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