BAV300 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diodes

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
Features
• Saving Space
• Silicon Epitaxial Planar Diodes
• Hermetic Sealed Parts
• Fits onto SOD-323/SOT-23 footprints
• Electrical data identical with the devices BAV100…BAV103
• Moisture Sensitivity Level 1
• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Maximum Ratings
Continuous Reverse
Voltage
BAV300
BAV301
BAV302
BAV303
Repetitive Peak Reverse
Voltage
BAV300
BAV301
BAV302
BAV303
Forward DC Current
Repetitive Peak Forward
Current
Surge Forward Current
Thermal Resistance
Junction to Ambient
Junction temperature
Storage temperature Range
VR
VRRM
IF
IFRM
IFSM
RthJA
Tj
Tstg
50V
100V
150V
200V
60V
120V
200V
250V
250mA
625mA
1.0A
500K/W
175℃
-65 to + 175℃
TA=25℃
TA=25℃
TA=25℃
f=50Hz, TA=25℃
TP=1s, Tj=25℃
Note 2
BAV300
THRU
BAV303
Switching Diodes
MICROMELF
Cathode Mark
C
B
A
Electrical Characteristics @ 25°C Unless Otherwise Specified
Maximum Forward Voltage
VF
1.00V
IF = 100mA ,TA=25℃
Maximum Leakage current
BAV300
BAV300
BAV301
BAV301
IR
BAV302
BAV302
BAV303
BAV303
Maximum Leakage current
BAV300
BAV301
BAV302
V(BR)
BAV303
100nA
15μA
100nA
15μA
100nA
15μA
100nA
15μA
60V
120V
200V
250V
VR=50V
VR=50V, Tj=100℃
VR=100V
VR=100V, Tj=100℃
VR=150V
VR=150V, Tj=100℃
VR=200V
VR=200V, Tj=100℃
IR=100μA, tP/T=0.01,
tP=0.3ms
Diode Capacitance
CD
Maximum Reverse recovery
time
trr
1.5pF
50ns
VR=0V, f=1.0MHz
IF=10mA, IR=30mA
Irr=3.0mA, RL=100Ω
Differential Forward
Resistance
rF
5.0 Ω
IF=10mA
Notes:1.Lead in Glass Exemption Applied, see EU Directive Annex 5.
2.mounted on epoxy-glass hard tissue, Fig.4 35μm copper clad, 0.9 mm²
copper area per electrode
DIMENSIONS
INCHES
MM
DIM
MIN
A
.071
B
.004
C
.047
MAX
MIN
MAX
NOTE
.079
1.8
2.0
.008
.10
.20
.051
1.20
1.30
∅
SUGGESTED SOLDER
PAD LAYOUT
0.039
0.055”
0.030”
Revision: A
www.mccsemi.com
1 of 3
2011/01/01